The metamaterial is made by depositing alternating layers of two semiconductors -- indium gallium arsenide and aluminium indium arsenide -- onto a substrate using molecular beam epitaxy. Each layer of the metamaterial is about 80 nm thick, which is much smaller than the wavelength of the infrared light.
This might provide a better, more controlled way of fabricating such material. Before this, it has been a tedious process to assemble one of these metamaterial, especially if one wants it to work in the viable region of microwave or shorter.
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